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0.12 µm Gate Length T-Shaped AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Fabricated Using a Plasma-Enhanced Chemical Vapor Deposited Silicon–Nitride-Assisted Process
Lim, Jong-Won, Ahn, Ho-Kyun, Ji, Hong-Gu, Chang, Woo-Jin, Mun, Jae-Kyoung, Kim, HaecheonVolume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.43.7934
Date:
December, 2004
File:
PDF, 260 KB
english, 2004