Flexible resistive switching memory based on Mn...

Flexible resistive switching memory based on Mn 0.20 Zn 0.80 O/HfO 2 bilayer structure

Zhou, Hai, Fang, Guo-Jia, Zhu, Yongdan, Liu, Nishuang, Li, Meiya, Zhao, Xing-Zhong
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Volume:
44
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/44/44/445101
Date:
November, 2011
File:
PDF, 756 KB
english, 2011
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