![](/img/cover-not-exists.png)
Flexible resistive switching memory based on Mn 0.20 Zn 0.80 O/HfO 2 bilayer structure
Zhou, Hai, Fang, Guo-Jia, Zhu, Yongdan, Liu, Nishuang, Li, Meiya, Zhao, Xing-ZhongVolume:
44
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/44/44/445101
Date:
November, 2011
File:
PDF, 756 KB
english, 2011