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Proposal of quasi thermal equilibrium model for etching phenomenon by gases: Example of the etching of 4H-SiC by H 2
Ishida, Yuuki, Yoshida, SadafumiVolume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.53.046501
Date:
April, 2014
File:
PDF, 541 KB
english, 2014