Analysis of the main acceptor defect in p-type GaAsN grown...

Japanese Journal of Applied Physics 2014 / 09 Vol. 53; Iss. 9

Analysis of the main acceptor defect in p-type GaAsN grown by chemical beam epitaxy

Elleuch, Omar, Bouzazi, Boussairi, Kowaki, Hiroyuki, Ikeda, Kazuma, Kojima, Nobuaki, Ohshita, Yoshio, Yamaguchi, Masafumi
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.091201
Date:
September, 2014
File:
PDF, 409 KB
english, 2014
Conversion to is in progress
Conversion to is failed