Evaluation of a Gate-First Process for AlGaN/GaN...

Japanese Journal of Applied Physics 2013 / 11 Vol. 52; Iss. 11S

Evaluation of a Gate-First Process for AlGaN/GaN Heterostructure Field-Effect Transistors

Li, Liuan, Kishi, Akinori, Shiraishi, Takayuki, Jiang, Ying, Wang, Qingpeng, Ao, Jin-Ping, Ohno, Yasuo
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.52.11nh01
Date:
November, 2013
File:
PDF, 1.16 MB
english, 2013
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