Growth and interfacial properties of atomic layer deposited...

Applied Physics 2014 / 11 Vol. 117; Iss. 3

Growth and interfacial properties of atomic layer deposited Al0.7Ti0.3O y high-k dielectric on Ge substrate

Lu, Hong-Liang, Xie, Zhang-Yi, Geng, Yang, Zhang, Yuan, Sun, Qing-Qing, Wang, Peng-Fei, Ding, Shi-Jin, Zhang, David Wei
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Volume:
117
Language:
english
Journal:
Applied Physics A
DOI:
10.1007/s00339-014-8579-9
Date:
November, 2014
File:
PDF, 1.16 MB
english, 2014
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