Effect of emitter design on the dc characteristics of...

Semiconductor Science and Technology 2001 / 03 Vol. 16; Iss. 3

Effect of emitter design on the dc characteristics of InP-based double-heterojunction bipolar transistors

Driad, R, McKinnon, W R, McAlister, S P, Garanzotis, T, SpringThorpe, A J
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Volume:
16
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/16/3/309
Date:
March, 2001
File:
PDF, 93 KB
english, 2001
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