Growth of GaN on Si(111) Substrates via a...

Japanese Journal of Applied Physics 2013 / 08 Vol. 52; Iss. 8S

Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer

Yamada, Takaya, Tanikawa, Tomoyuki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.52.08jb16
Date:
August, 2013
File:
PDF, 971 KB
english, 2013
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