Realization of Maskless Epitaxial Lateral Overgrowth of GaN on 3C-SiC/Si Substrates
Fang, Hao, Takaya, Yoshifumi, Miyake, Hideto, Hiramatsu, Kazumasa, Oku, Hidehiko, Asamura, Hidetoshi, Kawamura, KeisukeVolume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.52.08jb07
Date:
August, 2013
File:
PDF, 1.08 MB
english, 2013