GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy...

Japanese Journal of Applied Physics 2013 / 08 Vol. 52; Iss. 8S

GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy through Nanometer-Size Channels Fabricated with Nanoimprint Lithography

Usui, Akira, Matsueda, Toshiharu, Goto, Hiroki, Sunakawa, Haruo, Fujiyama, Yasuharu, Ishihara, Yujiro, Okada, Akiko, Shoji, Shuichi, Yamaguchi, Atsushi A., Nishihara, Hiromi, Shinohara, Hidetoshi, Got
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.52.08jb02
Date:
August, 2013
File:
PDF, 696 KB
english, 2013
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