GaN-on-Si Enhancement Mode Metal Insulator Semiconductor...

Japanese Journal of Applied Physics 2013 / 09 Vol. 52; Iss. 9R

GaN-on-Si Enhancement Mode Metal Insulator Semiconductor Heterostructure Field Effect Transistor with On-Current of 1.35 A/mm

Hahn, Herwig, Benkhelifa, Fouad, Ambacher, Oliver, Alam, Assadullah, Heuken, Michael, Yacoub, Hady, Noculak, Achim, Kalisch, Holger, Vescan, Andrei
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.090204
Date:
September, 2013
File:
PDF, 736 KB
english, 2013
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