Silicon – germanium epilayers: physical fundamentals of...

Silicon – germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures

Bolkhovityanov, Yu B, Pchelyakov, Oleg P, Chikichev, S I
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Volume:
44
Language:
english
Journal:
Physics-Uspekhi
DOI:
10.1070/PU2001v044n07ABEH000879
Date:
July, 2001
File:
PDF, 655 KB
english, 2001
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