Laser Operation of Nitride Laser Diodes with GaN Well Layer...

Japanese Journal of Applied Physics 2013 / 08 Vol. 52; Iss. 8S

Laser Operation of Nitride Laser Diodes with GaN Well Layer in 340 nm Band

Kuwabara, Masakazu, Yamashita, Yoji, Torii, Kousuke, Yoshida, Harumasa
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.52.08jg10
Date:
August, 2013
File:
PDF, 683 KB
english, 2013
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