[IEEE 2014 IEEE International Electron Devices Meeting...

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[IEEE 2014 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2014.12.15-2014.12.17)] 2014 IEEE International Electron Devices Meeting - Ultrathin (∼2nm) HfOx as the fundamental resistive switching element: Thickness scaling limit, stack engineering and 3D integration

Zhao, Liang, Zizhen Jiang,, Chen, Hong-Yu, Sohn, Joon, Okabe, Kye, Magyari-Kope, Blanka, Philip Wong, H.-S., Nishi, Yoshio
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Year:
2014
Language:
english
DOI:
10.1109/IEDM.2014.7046998
File:
PDF, 1.82 MB
english, 2014
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