Analysis of electric fields in very shallow silicon...

Analysis of electric fields in very shallow silicon junctions

SILARD, ANDREI P., DUŢ[Abreve], MIRON J.
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Volume:
61
Language:
english
Journal:
International Journal of Electronics
DOI:
10.1080/00207218608920906
Date:
November, 1986
File:
PDF, 396 KB
english, 1986
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