Mechanism of strain relaxation in BaSi 2...

Mechanism of strain relaxation in BaSi 2 epitaxial films on Si(111) substrates during post-growth annealing and application for film exfoliation

Hara, Kosuke O., Usami, Noritaka, Nakamura, Kotaro, Takabe, Ryouta, Baba, Masakazu, Toko, Kaoru, Suemasu, Takashi
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
10
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201300318
Date:
December, 2013
File:
PDF, 174 KB
english, 2013
Conversion to is in progress
Conversion to is failed