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Mechanism of strain relaxation in BaSi 2 epitaxial films on Si(111) substrates during post-growth annealing and application for film exfoliation
Hara, Kosuke O., Usami, Noritaka, Nakamura, Kotaro, Takabe, Ryouta, Baba, Masakazu, Toko, Kaoru, Suemasu, TakashiVolume:
10
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201300318
Date:
December, 2013
File:
PDF, 174 KB
english, 2013