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Impact of Diffusivity to Carrier Recombination Rate in Nitride Semiconductors: From Bulk GaN to (In,Ga)N Quantum Wells
Aleksiejūnas, Ramūnas, Ščajev, Patrik, Nargelas, Saulius, Malinauskas, Tadas, Kadys, Arūnas, Jarašiūnas, KęstutisVolume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.52.08jk01
Date:
August, 2013
File:
PDF, 751 KB
english, 2013