Light Improvement of Near Ultraviolet Light-Emitting Diodes by Utilizing Lattice-Matched InAlGaN as Barrier Layers in Active Region
Lu, Yu-Hsuan, Fu, Yi-Keng, Huang, Shyh-Jer, Su, Yan-Kuin, Xuan, Rong, Pilkuhn, Manfred H., Chen, Ying-ChihVolume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.52.08jl17
Date:
August, 2013
File:
PDF, 581 KB
english, 2013