Mechanism Study of Gate Leakage Current for AlGaN/GaN High...

Japanese Journal of Applied Physics 2013 / 04 Vol. 52; Iss. 4S

Mechanism Study of Gate Leakage Current for AlGaN/GaN High Electron Mobility Transistor Structure Under High Reverse Bias by Thin Surface Barrier Model and Technology Computer Aided Design Simulation

Hayashi, Kazuo, Yamaguchi, Yutaro, Oishi, Toshiyuki, Otsuka, Hiroshi, Yamanaka, Koji, Nakayama, Masatoshi, Miyamoto, Yasuyuki
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.04CF12
Date:
April, 2013
File:
PDF, 1.06 MB
english, 2013
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