High-Breakdown-Voltage and Low-Specific-on-Resistance GaN...

Japanese Journal of Applied Physics 2013 / 02 Vol. 52; Iss. 2R

High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p–n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process

Hatakeyama, Yoshitomo, Nomoto, Kazuki, Terano, Akihisa, Kaneda, Naoki, Tsuchiya, Tadayoshi, Mishima, Tomoyoshi, Nakamura, Tohru
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.52.028007
Date:
February, 2013
File:
PDF, 504 KB
english, 2013
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