Influence of drain bias on the electron mobility in...

Chinese Physics B 2013 / 06 Vol. 22; Iss. 6

Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

Lü, Yuan-Jie, Feng, Zhi-Hong, Cai, Shu-Jun, Dun, Shao-Bo, Liu, Bo, Yin, Jia-Yun, Zhang, Xiong-Wen, Fang, Yu-Long, Lin, Zhao-Jun, Meng, Ling-Guo, Luan, Chong-Biao
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Volume:
22
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/22/6/067104
Date:
June, 2013
File:
PDF, 858 KB
english, 2013
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