![](/img/cover-not-exists.png)
Novel Sn-assisted nitridation of Ge/HfO 2 interface and improved electrical properties of the MOS capacitor
Zhao, Mei, Liu, Lei, Liang, Renrong, Wang, Jing, Xu, JunVolume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.041301
Date:
April, 2014
File:
PDF, 1.04 MB
english, 2014