First Small-Signal Data of GaN-Based p-Channel...

Japanese Journal of Applied Physics 2013 / 12 Vol. 52; Iss. 12R

First Small-Signal Data of GaN-Based p-Channel Heterostructure Field Effect Transistors

Hahn, Herwig, Reuters, Benjamin, Pooth, Alexander, Noculak, Achim, Kalisch, Holger, Vescan, Andrei
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.128001
Date:
December, 2013
File:
PDF, 179 KB
english, 2013
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