Characterization of GaN-based p-channel device structures...

Characterization of GaN-based p-channel device structures at elevated temperatures

Hahn, Herwig, Reuters, Benjamin, Pooth, Alexander, Kalisch, Holger, Vescan, Andrei
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Volume:
29
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/29/7/075002
Date:
July, 2014
File:
PDF, 54 KB
english, 2014
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