Study on the degradation of NMOSFETs with ultra-thin gate...

Chinese Physics B 2009 / 12 Vol. 18; Iss. 12

Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress at high temperature

Shi-Gang, Hu, Yue, Hao, Xiao-Hua, Ma, Yan-Rong, Cao, Chi, Chen, Xiao-Feng, Wu
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Volume:
18
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/18/12/058
Date:
December, 2009
File:
PDF, 178 KB
english, 2009
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