Impact of self-complementary resistance switch induced by...

Impact of self-complementary resistance switch induced by over-reset energy on the memory reliability of hafnium oxide based resistive random access memory

Lee, Heng Yuan, Chen, Yu Sheng, Chen, Pang Shiu, Tsai, Chen Han, Gu, Pei Yi, Wu, Tai Yuan, Tsai, Kan Hseuh, Rahaman, Shakh Ziaur, Chen, Wei Su, Chen, Frederick, Tsai, Ming-Jing, Lee, Ming Hung, Ku, Tz
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.08LE01
Date:
August, 2014
File:
PDF, 799 KB
english, 2014
Conversion to is in progress
Conversion to is failed