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Impact of self-complementary resistance switch induced by over-reset energy on the memory reliability of hafnium oxide based resistive random access memory
Lee, Heng Yuan, Chen, Yu Sheng, Chen, Pang Shiu, Tsai, Chen Han, Gu, Pei Yi, Wu, Tai Yuan, Tsai, Kan Hseuh, Rahaman, Shakh Ziaur, Chen, Wei Su, Chen, Frederick, Tsai, Ming-Jing, Lee, Ming Hung, Ku, TzVolume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.08LE01
Date:
August, 2014
File:
PDF, 799 KB
english, 2014