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Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs
Xiao-Chuan, Deng, Zhen, Feng, Bo, Zhang, Zhao-Ji, Li, Liang, Li, Hong-Shu, PanVolume:
18
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/18/7/067
Date:
July, 2009
File:
PDF, 54 KB
english, 2009