Observation of deep levels and their hole capture behavior...

Japanese Journal of Applied Physics 2014 / 01 Vol. 53; Iss. 4S

Observation of deep levels and their hole capture behavior in p-type 4H-SiC epilayers with and without electron irradiation

Kato, Masashi, Yoshihara, Kazuki, Ichimura, Masaya, Hatayama, Tomoaki, Ohshima, Takeshi
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Volume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.04EP09
Date:
January, 2014
File:
PDF, 2.07 MB
english, 2014
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