![](/img/cover-not-exists.png)
Metal-oxide-semiconductor AlGaN/GaN heterostructure field-effect transistors using TiN/AlO stack gate layer deposited by reactive sputtering
Li, Liuan, Xu, Yonggang, Wang, Qingpeng, Nakamura, Ryosuke, Jiang, Ying, Ao, Jin-PingVolume:
30
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/30/1/015019
Date:
January, 2015
File:
PDF, 1.54 MB
english, 2015