Fabrication of GaN-based LEDs with 22° undercut sidewalls...

Chinese Physics B 2013 / 10 Vol. 22; Iss. 10

Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching

Wang, Bo, Su, Shi-Chen, He, Miao, Chen, Hong, Wu, Wen-Bo, Zhang, Wei-Wei, Wang, Qiao, Chen, Yu-Long, Gao, You, Zhang, Li, Zhu, Ke-Bao, Lei, Yan
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
22
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/22/10/106802
Date:
October, 2013
File:
PDF, 1.04 MB
english, 2013
Conversion to is in progress
Conversion to is failed