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Importance of Ge surface oxidation with high oxidation rate in obtaining low interface state density at oxide/Ge interfaces
Shibayama, Shigehisa, Kato, Kimihiko, Sakashita, Mitsuo, Takeuchi, Wakana, Taoka, Noriyuki, Nakatsuka, Osamu, Zaima, ShigeakiVolume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.08LD02
Date:
August, 2014
File:
PDF, 1.16 MB
english, 2014