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Temperature dependent I DS – V GS characteristics of an N-channel Si tunneling field-effect transistor with a germanium source on Si(110) substrate
Liu, Yan, Yan, Jing, Wang, Hongjuan, Han, GenquanVolume:
35
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/35/2/024001
Date:
February, 2014
File:
PDF, 921 KB
english, 2014