Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN...

IEEE Electron Device Letters 2015 / 3 Vol. 36; Iss. 3

Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors

Lee, Finella, Su, Liang-Yu, Wang, Chih-Hao, Wu, Yuh-Renn, Huang, Jianjang
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Volume:
36
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2395454
Date:
March, 2015
File:
PDF, 958 KB
english, 2015
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