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Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
Bouzazi, Boussairi, Kojima, Nobuaki, Ohshita, Yoshio, Yamaguchi, MasafumiVolume:
51
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.51.02BP02
Date:
February, 2012
File:
PDF, 517 KB
english, 2012