GaAs/AlAs Multilayer Cavity with Er-Doped InAs Quantum Dots...

GaAs/AlAs Multilayer Cavity with Er-Doped InAs Quantum Dots Embedded in Strain-Relaxed InGaAs Barriers for Ultrafast All-Optical Switches

Ueyama, Hyuga, Takahashi, Tomoya, Nakagawa, Yoshinori, Morita, Ken, Kitada, Takahiro, Isu, Toshiro
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Volume:
51
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.51.04dg06
Date:
April, 2012
File:
PDF, 497 KB
english, 2012
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