Tilted Domain and Indium Content of InGaN Layer on...

Japanese Journal of Applied Physics 2012 / 4 Vol. 51

Tilted Domain and Indium Content of InGaN Layer on $m$-Plane GaN Substrate Grown by Metalorganic Vapor Phase Epitaxy

Shojiki, Kanako, Hanada, Takashi, Shimada, Takaaki, Liu, Yuhuai, Katayama, Ryuji, Matsuoka, Takashi
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Volume:
51
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.51.04dh01
Date:
April, 2012
File:
PDF, 282 KB
english, 2012
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