Comparison of Two Types of Recessed-Gate Normally-Off...

Japanese Journal of Applied Physics 2012 / 5 Vol. 51

Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors

He, Zhiyuan, Li, Jialin, Wen, Yuhua, Shen, Zhen, Yao, Yao, Yang, Fan, Ni, Yiqiang, Wu, Zhisheng, Zhang, Baijun, Liu, Yang
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Volume:
51
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.51.054103
Date:
May, 2012
File:
PDF, 883 KB
english, 2012
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