Simulation of electrical properties of In x...

Journal of Semiconductors 2011 / 08 Vol. 32; Iss. 8

Simulation of electrical properties of In x Al 1— x N/AlN/GaN high electron mobility transistor structure

Bi, Yang, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Yang, Cuibai, Peng, Enchao, Lin, Defeng, Feng, Chun, Jiang, Lijuan
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Volume:
32
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/32/8/083003
Date:
August, 2011
File:
PDF, 422 KB
english, 2011
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