Gate-all-around floating-gate memory device with triangular poly-Si nanowire channels
Tsai, Jung-Ruey, Lee, Ko-Hui, Lin, Horng-Chih, Huang, Tiao-YuanVolume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.04ED14
Date:
January, 2014
File:
PDF, 1.77 MB
english, 2014