Performance Comparison of InAs, InSb, and GaSb n-Channel...

Applied Physics Express 2013 / 03 Vol. 6; Iss. 3

Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors in the Ballistic Transport Limit

Shimoida, Kenta, Tsuchiya, Hideaki, Kamakura, Yoshinari, Mori, Nobuya, Ogawa, Matsuto
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Volume:
6
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.6.034301
Date:
March, 2013
File:
PDF, 987 KB
english, 2013
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