Physically-based modeling for hole scattering rate in...

Journal of Central South University 2015 / 2 Vol. 22; Iss. 2

Physically-based modeling for hole scattering rate in strained Si1−x Ge x /(100)Si

Wang, Bin, Hu, Hui-yong, Zhang, He-ming, Song, Jian-jun, Zhang, Yu-ming
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Volume:
22
Language:
english
Journal:
Journal of Central South University
DOI:
10.1007/s11771-015-2539-1
Date:
February, 2015
File:
PDF, 1.22 MB
english, 2015
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