Improvement of Performance in p-Side Down InGaN/GaN...

Improvement of Performance in p-Side Down InGaN/GaN Light-Emitting Diodes with Graded Electron Blocking Layer

Li, Zhiqiang, Lestrade, Michel, Xiao, Yegao, Li, Zhanming Simon
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Volume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.50.080212
Date:
August, 2011
File:
PDF, 527 KB
english, 2011
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