GaAsSb-Based DHBTs With a Reduced Base Access Distance and...

IEEE Electron Device Letters 2014 / 12 Vol. 35; Iss. 12

GaAsSb-Based DHBTs With a Reduced Base Access Distance and \(f_{\mathrm {T}}/f_{\mathrm {MAX}}=\) 503/780 GHz

Alexandrova, Maria, Flueckiger, Ralf, Lovblom, Rickard, Ostinelli, Olivier, Bolognesi, C. R.
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Volume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2014.2364622
Date:
December, 2014
File:
PDF, 981 KB
english, 2014
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