Growth of High-Quality Si-Doped AlGaN by Low-Pressure...

Japanese Journal of Applied Physics 2011 / 9 Vol. 50; Iss. 9

Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy

Shimahara, Yuki, Miyake, Hideto, Hiramatsu, Kazumasa, Fukuyo, Fumitsugu, Okada, Tomoyuki, Takaoka, Hidetsugu, Yoshida, Harumasa
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Volume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.50.095502
Date:
September, 2011
File:
PDF, 741 KB
english, 2011
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