The Light Extraction Efficiency of p-GaN Patterned...

Japanese Journal of Applied Physics 2011 / 10 Vol. 50; Iss. 10

The Light Extraction Efficiency of p-GaN Patterned InGaN/GaN Light-Emitting Diodes Fabricated by Size-Controllable Nanosphere Lithography

Sim, Jae In, Lee, Byoung Gyu, Yang, Ji Won, Yoon, Hyung-do, Kim, Tae Geun
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Volume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.50.102101
Date:
October, 2011
File:
PDF, 528 KB
english, 2011
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