Non-quasi-static approach with surface-potential-based...

Mathematics and Computers in Simulation 2008 Vol. 79; Iss. 4

Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations

T. Ezaki, D. Navarro, Y. Takeda, N. Sadachika, G. Suzuki, M. Miura-Mattausch, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, S. Kumashiro, S. Miyamoto
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
79
Year:
2008
Language:
english
Pages:
11
DOI:
10.1016/j.matcom.2007.10.008
File:
PDF, 1012 KB
english, 2008
Conversion to is in progress
Conversion to is failed