Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon...

Japanese Journal of Applied Physics 2012 / 01 Vol. 51; Iss. 1

Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing

Aida, Hideo, Takeda, Hidetoshi, Aota, Natsuko, Koyama, Koji
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Volume:
51
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.51.016504
Date:
January, 2012
File:
PDF, 1004 KB
english, 2012
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