[IEEE 2014 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2014.12.15-2014.12.17)] 2014 IEEE International Electron Devices Meeting - MIT virtual source GaNFET-RF compact model for GaN HEMTs: From device physics to RF frontend circuit design and validation
Radhakrishna, Ujwal, Choi, Pilsoon, Goswami, Sushmit, Li-Shiuan Peh,, Palacios, Tomas, Antoniadis, DimitriYear:
2014
Language:
english
DOI:
10.1109/IEDM.2014.7047034
File:
PDF, 975 KB
english, 2014