TRANSPORT AND NOISE FEATURES IN AlGaN/GaN FIELD EFFECT...

International Journal of Nanoscience 2005 / 10 Vol. 4; Iss. 5n6

TRANSPORT AND NOISE FEATURES IN AlGaN/GaN FIELD EFFECT TRANSISTOR WITH NANOMETER-SCALING GATE LENGTH

VITUSEVICH, S. A., PETRYCHUK, M. V., DANYLYUK, S. V., KURAKIN, A. M., KLEIN, N., LÜTH, H., BELYAEV, A. E.
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Volume:
4
Language:
english
Journal:
International Journal of Nanoscience
DOI:
10.1142/S0219581X05003978
Date:
October, 2005
File:
PDF, 265 KB
english, 2005
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