Simple and Accurate Circuit Simulation Model for SiC Power...

IEEE Transactions on Electron Devices 2015 / 2 Vol. 62; Iss. 2

Simple and Accurate Circuit Simulation Model for SiC Power MOSFETs

Arribas, Alejandro Pozo, Shang, Fei, Krishnamurthy, Mahesh, Shenai, Krishna
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Volume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2014.2384277
Date:
February, 2015
File:
PDF, 2.03 MB
english, 2015
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